SHORT-TIME ANNEALING

被引：102

作者：

SEDGWICK, TO

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 02期

关键词：

D O I：

10.1149/1.2119736

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：484 / 493

页数：10

共 85 条

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[4]

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[8]

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[9] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

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[10] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J].

CULLIS, AG ;

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CHEW, NG .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :547-550

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