ELECTRICAL ACTIVATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER ANNEALING OF BF2+ IMPLANTED AMORPHIZED SILICON

被引：4

作者：

BHATTACHARYYA, A

IYER, V

STREETMAN, BG

BAKER, JE

WILLIAMS, P

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1981年 / 4卷 / 04期

关键词：

D O I：

10.1109/TCHMT.1981.1135844

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：425 / 428

页数：4

共 14 条

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