THEORETICAL AND EXPERIMENTAL INVESTIGATION OF THE DYNAMICS OF PULSED LASER ANNEALING OF AMORPHOUS-SILICON

被引：28

作者：

BHATTACHARYYA, A ^{[1
]}

STREETMAN, BG ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.329094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3611 / 3617

页数：7

共 19 条

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[3]

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[4]

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[7]

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[8] DEPTH OF DEFECT ANNIHILATION IN SILICON BY PULSE LASER ANNEALING - EXPERIMENT AND THEORY [J].

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[9]

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[10] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS [J].

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