ANNEALING OF ANTIMONY IMPLANTED SILICON WITH HALOGEN LAMP IRRADIATION

被引：16

作者：

BORISENKO, VE

LABUNOV, VA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 72卷 / 02期

关键词：

D O I：

10.1002/pssa.2210720262

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K173 / K176

页数：4

共 11 条

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[2] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J].

COHEN, RL ;

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WEST, KW .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :751-753

[3] INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

CORRERA, L ;

PEDULLI, L .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :55-57

[4] ARSENIC-IMPLANTED SI LAYERS ANNEALED USING A CW XE ARC LAMP [J].

DROWLEY, C ;

HU, C .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :876-878

[5] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

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KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

[6]

HU SM, 1973, ATOMIC DIFFUSION SEM

[7] FLASH LAMP ANNEALING OF ARSENIC IMPLANTED SILICON [J].

KLABES, R ;

MATTHAI, J ;

VOELSKOW, M ;

KACHURIN, GA ;

NIDAEV, EV ;

BARTSCH, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01) :261-266

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J].

NISHIYAMA, K ;

ARAI, M ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L563-L566

[9]

PEDULLI L, 1981, MATERIALS RES SOC AN, P21

[10]

POWELL RA, 1981, APPL PHYS LETT, V39, P250

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