FLASH LAMP ANNEALING OF ARSENIC IMPLANTED SILICON

被引：24

作者：

KLABES, R ^{[1
]}

MATTHAI, J ^{[1
]}

VOELSKOW, M ^{[1
]}

KACHURIN, GA ^{[1
]}

NIDAEV, EV ^{[1
]}

BARTSCH, H ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-4020 HALLE SAALE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 01期

关键词：

D O I：

10.1002/pssa.2210660131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：261 / 266

页数：6

共 14 条

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[2]

BOMKE HA, 1978, APPL PHYS LETT, V33, P965

[3] THERMALLY ASSISTED FLASH ANNEALING OF SILICON AND GERMANIUM [J].

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WILLIAMS, JS ;

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WEST, KW .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :751-753

[4] INCOHERENT-LIGHT-FLASH ANNEALING OF PHOSPHORUS-IMPLANTED SILICON [J].

CORRERA, L ;

PEDULLI, L .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :55-57

[5] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

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KENNEDY, EF ;

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MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[6]

GAT A, 1979, SOLID STATE TECHNOL, V22, P59

[7] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[8]

HEINIG KH, UNPUBLISHED

[9]

KACHURIN GA, 1977, FIZ TEKH POLUPROV, V11, P2012

[10] ARC ANNEALING OF BF+2 IMPLANTED SILICON BY A SHORT PULSE FLASH LAMP [J].

LUE, JT .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :73-76

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