ARSENIC-IMPLANTED SI LAYERS ANNEALED USING A CW XE ARC LAMP

被引：12

作者：

DROWLEY, C ^{[1
]}

HU, C ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：876 / 878

页数：3

共 16 条

[1]

ANTONIADIS DA, 1978, J ELECTROCHEM SOC, V125, P818

[2] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE [J].

BOMKE, HA ;

BERKOWITZ, HL ;

HARMATZ, M ;

KRONENBERG, S ;

LUX, R .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :955-957

[3]

BRICE DK, 1975, ION IMPLANTATION RAN, V1, pCH5

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[5] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[6] HIGH-SPEED IMPLEMENTATION AND EXPERIMENTAL EVALUATION OF MULTILAYER SPREADING RESISTANCE ANALYSIS [J].

DAVANZO, DC ;

RUNG, RD ;

GAT, A ;

DUTTON, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1170-1176

[7]

Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[8] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[9] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J].

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1256-1258

[10] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

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