TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON

被引：86

作者：

CHO, K ^{[1
]}

NUMAN, M ^{[1
]}

FINSTAD, TG ^{[1
]}

CHU, WK ^{[1
]}

LIU, J ^{[1
]}

WORTMAN, JJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.96267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1321 / 1323

页数：3

共 16 条

[1] ANNEALING OF ANTIMONY IMPLANTED SILICON WITH HALOGEN LAMP IRRADIATION
BORISENKO, VE
LABUNOV, VA
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02): : K173 - K176
[2] NECESSITY FOR SELF-DIFFUSION IN SEMICONDUCTORS TO OCCUR THROUGH A VACANCY MECHANISM
BOURGOIN, JC
[J]. PHYSICAL REVIEW B, 1984, 29 (08): : 4789 - 4790
[3] STUDIES ON THE LATTICE POSITION OF BORON IN SILICON
FINK, D
BIERSACK, JP
CARSTANJEN, HD
JAHNEL, F
MULLER, K
RYSSEL, H
OSEI, A
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (1-2): : 11 - 33
[4] INTERSTITIAL PROPERTIES DEDUCED FROM INTERNAL-FRICTION MEASUREMENTS ON BORON-IMPLANTED SILICON
FRANK, W
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (02): : 119 - 133
[5] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP
GAT, A
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87
[6] Hodgson R. T., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P355
[7] RAPID THERMAL ANNEALING OF BORON-IMPLANTED SILICON USING AN ULTRAHIGH POWER ARC LAMP
HODGSON, RT
DELINE, VR
MADER, S
GELPEY, JC
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 589 - 591
[8] Hofker W. K., 1973, ION IMPLANTATION SEM, P133
[9] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON
KALISH, R
SEDGWICK, TO
MADER, S
SHATAS, S
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 107 - 109
[10] RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
NARAYAN, J
HOLLAND, OW
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2913 - 2921

← 1 2 →