NECESSITY FOR SELF-DIFFUSION IN SEMICONDUCTORS TO OCCUR THROUGH A VACANCY MECHANISM

[1] ON SELF-DIFFUSION IN SILICON AND GERMANIUM [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 46 (3-4): : 157 - 161

[2] BOURGOIN JC, UNPUB

[3] Fair R. B., 1981, Impurity doping processes in silicon, P315

[4] STUDIES ON THE LATTICE POSITION OF BORON IN SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (1-2): : 11 - 33

[5] LANNOO M, 1981, POINT DEFECTS SEMICO, V1, pCH7

[6] SEEGER A, 1977, I PHYS C SERIES, V31, P12

[7] SEEGER A, 1979, I PHYS C SER, V46, P148

[8] INTERSTITIAL SUPERSATURATION NEAR PHOSPHORUS-DIFFUSED EMITTER ZONES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 530 - 532

[9] FORMATION OF INTERSTITIAL-TYPE DISLOCATION LOOPS IN TETRAHEDRAL SEMICONDUCTORS BY PRECIPITATION OF VACANCIES [J]. PHYSICAL REVIEW B, 1978, 17 (08): : 3197 - 3206

[10] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97

[1] ON SELF-DIFFUSION IN SILICON AND GERMANIUM [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 46 (3-4): : 157 - 161

[2] BOURGOIN JC, UNPUB

[3] Fair R. B., 1981, Impurity doping processes in silicon, P315

[4] STUDIES ON THE LATTICE POSITION OF BORON IN SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (1-2): : 11 - 33

[5] LANNOO M, 1981, POINT DEFECTS SEMICO, V1, pCH7

[6] SEEGER A, 1977, I PHYS C SERIES, V31, P12

[7] SEEGER A, 1979, I PHYS C SER, V46, P148

[8] INTERSTITIAL SUPERSATURATION NEAR PHOSPHORUS-DIFFUSED EMITTER ZONES IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 530 - 532

[9] FORMATION OF INTERSTITIAL-TYPE DISLOCATION LOOPS IN TETRAHEDRAL SEMICONDUCTORS BY PRECIPITATION OF VACANCIES [J]. PHYSICAL REVIEW B, 1978, 17 (08): : 3197 - 3206

[10] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97