INTERSTITIAL SUPERSATURATION NEAR PHOSPHORUS-DIFFUSED EMITTER ZONES IN SILICON

被引：68

作者：

STRUNK, H ^{[1
]}

GOSELE, U ^{[1
]}

KOLBESEN, BO ^{[1
]}

机构：

[1] SIEMENS AG,UNTERNEMENBEREICH BAUELEMENTE,D-8000 MUNICH 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.90853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bipolar transistors with consecutively diffused boron base and phosphorus emitter showing the emitter-push effect" have been investigated by transmission electron microscopy. The analysis of isolated dislocation helices in the emitter and base regions indicates the presence of a self-interstitial supersaturation in front of the phosphorus-diffused zone. This result refutes the widely accepted explanation of the "emitter-push effect" in terms of a phosphorus-induced vacancy supersaturation."

引用

页码：530 / 532

页数：3

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