INTERSTITIAL SUPERSATURATION NEAR PHOSPHORUS-DIFFUSED EMITTER ZONES IN SILICON

被引：68

作者：

STRUNK, H ^{[1
]}

GOSELE, U ^{[1
]}

KOLBESEN, BO ^{[1
]}

机构：

[1] SIEMENS AG,UNTERNEMENBEREICH BAUELEMENTE,D-8000 MUNICH 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.90853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bipolar transistors with consecutively diffused boron base and phosphorus emitter showing the emitter-push effect" have been investigated by transmission electron microscopy. The analysis of isolated dislocation helices in the emitter and base regions indicates the presence of a self-interstitial supersaturation in front of the phosphorus-diffused zone. This result refutes the widely accepted explanation of the "emitter-push effect" in terms of a phosphorus-induced vacancy supersaturation."

引用

页码：530 / 532

页数：3

共 19 条

[11] NEUTRON IRRADIATION DAMAGE IN MOLYBDENUM .1. CHARACTERIZATION OF SMALL PERFECT DISLOCATION LOOPS BY TRANSMISSION ELECTRON MICROSCOPY [J].

MAHER, DM ;

EYRE, BL .

PHILOSOPHICAL MAGAZINE, 1971, 23 (182) :409-&

[12] PHOSPHORUS DIFFUSION IN SILICON UNDER OXIDIZING ATMOSPHERES [J].

MASETTI, G ;

SOLMI, S ;

SONCINI, G .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1419-1421

[13] OXIDATION-RATE DEPENDENCE OF PHOSPHORUS DIFFUSIVITY IN SILICON [J].

MASETTI, G ;

SOLMI, S ;

SONCINI, G .

PHILOSOPHICAL MAGAZINE, 1976, 33 (04) :613-621

[14] DISTRIBUTION OF EXCESS VACANCIES IN BULK AT DIFFUSION OF PHOSPHORUS INTO SILICON [J].

MATSUMOTO, S ;

ARAI, E ;

NAKAMURA, H ;

NIIMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) :1177-1185

[15] STUDIES OF ANOMALOUS DIFFUSION OF IMPURITIES IN SILICON [J].

NICHOLAS, KH .

SOLID-STATE ELECTRONICS, 1966, 9 (01) :35-+

[16] FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON [J].

TSENG, WF ;

LAU, SS ;

MAYER, JW .

PHYSICS LETTERS A, 1978, 68 (01) :93-94

[17] DIFFUSION-INDUCED DISLOCATIONS IN SILICON [J].

WASHBURN, J ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1909-&

[18] INTERACTIONS BETWEEN SEQUENTIAL DOPANT DIFFUSIONS IN SILICON - REVIEW [J].

WILLOUGHBY, AFW .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (04) :455-480

[19] EXCESS VACANCY GENERATION MECHANISM AT PHOSPHORUS DIFFUSION INTO SILICON [J].

YOSHIDA, M ;

ARAI, E ;

NAKAMURA, H ;

TERUNUMA, Y .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1498-1506

← 1 2 →