FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON

被引：8

作者：

TSENG, WF ^{[1
]}

LAU, SS ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHYSICS LETTERS A | 1978年 / 68卷 / 01期

关键词：

D O I：

10.1016/0375-9601(78)90768-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：93 / 94

页数：2

共 9 条

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VECCHI, I .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1806-1812

[2]

Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[3] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[4] LATTICE MISFIT AND ITS COMPENSATION IN SI-EPITAXIAL LAYER BY DOPING WITH GERMANIUM AND CARBON [J].

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MIYAMOTO, N ;

NISHIZAWA, J .

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[5] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON [J].

MAHAJAN, S ;

ROZGONYI, GA ;

BRASEN, D .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :73-75

[6] OXIDATION INDUCED STACKING-FAULTS IN N-TYPE AND P-TYPE (100) SILICON [J].

MURAKA, SP ;

QUINTANA, G .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :46-51

[7]

Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[8] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].

SANDERS, IR ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&

[9] DISLOCATION NETWORKS IN PHOSPHORUS-IMPLANTED SILICON [J].

TAMURA, M .

PHILOSOPHICAL MAGAZINE, 1977, 35 (03) :663-691

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