NEW PREPARATION METHOD FOR LARGE AREA ELECTRON-TRANSPARENT SILICON SAMPLES

被引：30

作者：

KOLBESEN, BO ^{[1
]}

MAYER, KR ^{[1
]}

SCHUH, GE ^{[1
]}

机构：

[1] SIEMENS AG,GRUNDLAGENENTWICKL HALBLEITER,POB 460705,8 MUNICH 46,FED REP GER

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1975年 / 8卷 / 03期

关键词：

D O I：

10.1088/0022-3735/8/3/015

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：197 / 199

页数：3

共 9 条

[1] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON
BERNEWITZ, LI
KOLBESEN, BO
MAYER, KR
SCHUH, GE
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 277 - 279
[2] BERNEWITZ LI, 1973, PHYS STATUS SOLIDI A, V16, P579, DOI 10.1002/pssa.2210160228
[3] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY
BOOKER, GR
STICKLER, R
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &
[4] DAS G, 1974, IBM J RES DEV, P76
[5] GRIENAUER HA, 1974, LECTURE INT C LATTIC
[6] METHOD FOR PRODUCING LARGE SI FILMS FOR PRESELECTED IMPERFECTION ANALYSIS
LAWRENCE, JE
KOEHLER, H
[J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1965, 42 (04): : 270 - &
[7] LIDBURY DPG, 1971, ELECTRON ENGINEERING, P50
[8] SAMPLE PREPARATION FOR TRANSMISSION ELECTRON MICROSCOPY OF GERMANIUM
RIESZ, RP
BJORLING, CG
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1961, 32 (08) : 889 - &
[9] SIRTL E, 1961, Z METALLKD, V52, P529