共 23 条
[3]
HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP
[J].
ELECTRON DEVICE LETTERS,
1981, 2 (04)
:85-87
[4]
THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
[J].
PHYSICAL REVIEW,
1964, 134 (4A)
:1058-+
[5]
GOLDSMITH A, 1961, HDB THERMOPHYSICAL P, V1, P1
[8]
Mayer J. W., 1970, ION IMPLANTATION SEM