Nonactivated transport of strongly interacting two-dimensional holes in GaAs

被引：21

作者：

Huang, Jian ^{[1
]}

Novikov, D. S.

Tsui, D. C.

Pfeiffer, L. N.

West, K. W.

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.74.201302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the transport measurements of two-dimensional holes in GaAs field-effect transistors with record low densities down to 7x10(8) cm(-2). Remarkably, such a dilute system (with Fermi wavelength approaching 1 mu m) exhibits a nonactivated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly interacting regime.

引用

页数：4

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