Ba1-xSrxTiO3 thin films by polymeric precursor method

被引:39
作者
Pontes, FM
Longo, E
Rangel, JH
Bernardi, MI
Leite, ER
Varela, JA
机构
[1] Univ Fed Sao Carlos, Dept Quim, BR-13560905 Sao Carlos, SP, Brazil
[2] UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Ba1-xSrxTiO3; spin-coating; polymeric precursor method;
D O I
10.1016/S0167-577X(99)00268-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Stoichiometric Ba1-xSrxTiO3 (BST; x = 0.4) thin films were prepared by the polymeric precursor method. High quality polycrystalline films of BST with low roughness (approximate to 3 nm) were obtained from a Pt/Ti/SiO2/Si substrate deposited by spin-coating technique. Microstructure and morphological evaluation were done using grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Grazing incident angle XRD characterization of these films showed that BST phase crystallizes at 600 degrees C from an inorganic amorphous matrix. No intermediate crystalline phase was identified. A linear relationship between roughness and grain size was observed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:249 / 253
页数:5
相关论文
共 25 条
[1]   Preparation of barium cerate-based thin films using a modified Pechini process [J].
Agarwal, V ;
Liu, ML .
JOURNAL OF MATERIALS SCIENCE, 1997, 32 (03) :619-625
[2]  
Ahn JH, 1998, J KOREAN PHYS SOC, V32, pS1513
[3]   SYNTHESIS OF ULTRA-FINE CRYSTALLINE ZRXTI1-XO4 POWDER BY POLYMERIC PRECURSOR METHOD [J].
CERQUEIRA, M ;
NASAR, RS ;
LONGO, E ;
LEITE, ER ;
VARELA, JA .
MATERIALS LETTERS, 1995, 22 (3-4) :181-185
[4]   LEAKAGE AND INTERFACE ENGINEERING IN TITANATE THIN-FILMS FOR NONVOLATILE FERROELECTRIC MEMORY AND ULSI DRAMS [J].
CHEN, X ;
KINGON, AI ;
ALSHAREEF, HN ;
BELLUR, KR ;
GIFFORD, K ;
AUCIELLO, O .
INTEGRATED FERROELECTRICS, 1995, 7 (1-4) :291-306
[5]   CUBIC PARAELECTRIC (NONFERROELECTRIC) PEROVSKITE PLT THIN-FILMS WITH HIGH PERMITTIVITY FOR ULSI DRAMS AND DECOUPLING CAPACITORS [J].
DEY, SK ;
LEE, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) :1607-1613
[6]  
FORK DK, 1996, MRS B, V6
[7]   Effects of interfacial roughness on the leakage properties of SrTiO3 thin film capacitors [J].
Fukuda, Y ;
Aoki, K ;
Numata, K ;
Aoyama, S ;
Nishimura, A ;
Summerfelt, S ;
Tsu, R .
INTEGRATED FERROELECTRICS, 1995, 11 (1-4) :121-127
[8]  
Jang SI, 1998, J KOREAN PHYS SOC, V32, pS1547
[9]  
Jo W, 1998, J KOREAN PHYS SOC, V32, pS1442
[10]   Effects of post-annealing on the conduction properties of Pt/(Ba,Sr)TiO3/Pt capacitors for dynamic random access memory applications [J].
Joo, JH ;
Jeon, YC ;
Seon, JM ;
Oh, KY ;
Roh, JS ;
Kim, JJ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7A) :4382-4385