Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors

被引：15

作者：

Maximov, MV

Tsatsul'nikov, AF

Volovik, BV

Bedarev, DA

Zhukova, AE

Kovsh, AR

Maleev, NA

Ustinov, VM

Kop'ev, PS

Alferov, ZI

Heitz, R

Ledentsov, NN

Bimberg, D

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICA E | 2000年 / 7卷 / 3-4期

关键词：

quantum dot; activated alloy decomposition; 1.3 mu m laser;

D O I：

10.1016/S1386-9477(99)00334-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied quantum dots (QDs) fabricated by activated spinodal decomposition (ASD) of an InGa(Al)As alloy deposited on top of self-organized InAs nanoscale stressors on GaAs substrate. Such a growth sequence results in a strong red shift of the PL emission down to 1.3 mu m at 300 K. This red shift is caused by the formation of In-rich areas in the vicinity of the InAs islands, which increase the effective dot size. Beyond a certain critical InAs composition or nominal thickness of the InGa(Al)As layer the PL line shifts back towards higher energies. Adding Al to the alloy increases the red shift for a given In concentration. Room temperature lasing near 1.3 mu m with threshold current densities of about 85 A/cm(2) was achieved for lasers based on three-fold stacked ASD-formed QDs, with a maximum cw output power of 2.7 W. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：326 / 330

页数：5

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