The influence of static and rotating magnetic fields on heat and mass transfer in silicon floating zones

被引:8
作者
Cröll, A [1 ]
Dold, P
Kaiser, T
Szofran, FR
Benz, KW
机构
[1] Univ Alabama, Alliance Micrograv Mat Sci & Applicat, NASA, MSFC, Huntsville, AL 35812 USA
[2] Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany
[3] NASA, George C Marshall Space Flight Ctr, Huntsville, AL 35812 USA
关键词
D O I
10.1149/1.1391926
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 [应用化学];
摘要
Heat and mass transfer in float-zone processing are strongly influenced by convective flows in the zone. They are caused by buoyancy convection, thermocapillary (Marangoni) convection, or artificial sources such as rotation and radio-frequency heating. Flows in conducting melts can be controlled by the use of magnetic fields, either by damping fluid motion with static fields or by generating a defined flow with rotating fields. The possibilities of using static and rotating magnetic fields in silicon floating-zone growth have been investigated by experiments in axial static fields up to 5 T and in transverse rotating magnetic fields up to 7.5 mT Static fields of a few 100 mT already suppress most striations but are detrimental to the radial segregation by introducing a coring effect. A complete suppression of dopant striations caused by time-dependent thermocapillary convection and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile toward a more diffusion-limited case, is possible with static fields greater than or equal to 1 T. However, under certain conditions the use of high axial magnetic fields can lead to the appearance of a new type of pronounced dopant striations, caused by thermoelectromagnetic convection. The use of a transverse rotating magnetic field influences the microscopic segregation at quite low inductions, of the order of a few millitesla. The field shifts time-dependent flows and the resulting striation patterns from a broad range of low frequencies at high amplitudes to a few high frequencies at low amplitudes. (C) 1999 The Electrochemical Society. S0013-4651 (98)03-086-9. All rights reserved.
引用
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页码:2270 / 2275
页数:6
相关论文
共 28 条
[1]
SINGLE-CRYSTAL GROWTH WITH THE CZOCHRALSKI METHOD INVOLVING ROTATIONAL ELECTROMAGNETIC STIRRING OF THE MELT [J].
BRUCKNER, FU ;
SCHWERDTFEGER, K .
JOURNAL OF CRYSTAL GROWTH, 1994, 139 (3-4) :351-356
[2]
Floating-zone growth of silicon in magnetic fields - II. Strong static axial fields [J].
Croll, A ;
Szofran, FR ;
Dold, P ;
Benz, KW ;
Lehoczky, SL .
JOURNAL OF CRYSTAL GROWTH, 1998, 183 (04) :554-563
[3]
FLOATING-ZONE GROWTH OF SURFACE-COATED SILICON UNDER MICROGRAVITY [J].
CROLL, A ;
MULLER, W ;
NITSCHE, R .
JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :65-70
[4]
CROLL A, 1987, MAT SCI MICROGRAVITY, P87
[5]
Croll A., 1991, Microgravity Sci. Technol, V3, P204
[6]
GROWTH OF HOMOGENEOUS HIGH-RESISTIVITY FZ SILICON-CRYSTALS UNDER MAGNETIC-FIELD BIAS [J].
DELEON, N ;
GULDBERG, J ;
SALLING, J .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (02) :406-408
[7]
Modification of fluid flow and heat transport in vertical Bridgman configurations by rotating magnetic fields [J].
Dold, P ;
Benz, KW .
CRYSTAL RESEARCH AND TECHNOLOGY, 1997, 32 (01) :51-60
[8]
Floating-zone growth of silicon in magnetic fields - I. Weak static axial fields [J].
Dold, P ;
Croll, A ;
Benz, KW .
JOURNAL OF CRYSTAL GROWTH, 1998, 183 (04) :545-553
[9]
Convective temperature fluctuations in liquid gallium in dependence on static and rotating magnetic fields [J].
Dold, P ;
Benz, KW .
CRYSTAL RESEARCH AND TECHNOLOGY, 1995, 30 (08) :1135-1145
[10]
STRIATION-FREE SILICON-CRYSTALS BY FLOAT-ZONING WITH SURFACE-COATED MELT [J].
EYER, A ;
LEISTE, H .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :249-252