The enhanced field emission from microtips covered by ultrathin layers

被引：15

作者：

Litovchenko, VG ^{[1
]}

Evtukh, AA ^{[1
]}

Marchenko, RI ^{[1
]}

Klyui, NI ^{[1
]}

Semenovich, VA ^{[1
]}

机构：

[1] NATL ACAD SCI UKRAINE,INST SUPERHARD MAT,UA-254074 KIEV,UKRAINE

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1997年 / 7卷 / 01期

关键词：

D O I：

10.1088/0960-1317/7/1/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of different types of covering on electron field emission from silicon tips has been studied. For this a series of silicon tip array structures, namely (i) structures with porous silicon layers on the tops of the tips, (ii) tips covered with carbon films, (iii) silicon tips implanted by hydrogen, and (iv) cesium-enriched silicon tips, has been prepared and investigated. The comparison and characterization of various structures using effective work functions, field enhancement factors, and effective emission areas obtained from Fowler-Nordheim plots have been performed. Models and mechanisms of enhancement of the electron field emission have been proposed.

引用

页码：1 / 6

页数：6

共 22 条

[1] FIELD-EMISSION FROM METAL-COATED SILICON TIPS [J].

BRANSTON, DW ;

STEPHANI, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2329-2333

[2]

BRODIE I, 1992, ADV ELECTRON EL PHYS, V83, P1

[3]

DERBYSHIRE K, 1994, SOLID STATE TECH NOV, P55

[4]

EVTUKH AA, 1995, MRS SPRING M SAN FRA, P396

[5] OPTICAL-PROPERTIES OF GRAPHITE-LIKE CARBON-FILMS [J].

GAVRILENKO, VI ;

FROLOV, SI ;

PIDLISNYJ, EV .

THIN SOLID FILMS, 1990, 190 (02) :255-263

[6] ASPECTS OF FIELD-EMISSION FROM SILICON DIODE-ARRAYS [J].

HARVEY, RJ ;

LEE, RA ;

MILLER, AJ ;

WIGMORE, JK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2323-2328

[7]

HONG D, 1994, P 7 INT VAC MICR C G, P96

[8]

HUANG ZH, 1994, P 7 INT VAC MICR C G, P92

[9] THE METHODOLOGY OF SIMULATING PARTICLE TRAJECTORIES THROUGH TUNNELING STRUCTURES USING A WIGNER DISTRIBUTION APPROACH [J].

JENSEN, KL ;

BUOT, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2337-2347

[10]

KING RA, 1994, P 7 INT VAC MICR C G, P379

← 1 2 3 →