Electron paramagnetic resonance study of amorphous silicon produced by Kr+ ion implantation into silicon

被引：5

作者：

Rakvin, B ^{[1
]}

Pivac, B ^{[1
]}

Reitano, R ^{[1
]}

机构：

[1] INST NAZL FIS MAT,I-95129 CATANIA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.364704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed analysis of the electon paramagnetic resonance line shape was performed on amorphous Si samples obtained by Kr+ ion implantation. The Lorentzian character and behavior upon annealing was explained via a strong exchange interaction, leading to a cluster model for the spin density distribution. The saturation measurements are shown to be a convenient method to study structural changes caused by thermal annealing. The spin density distribution (as described with the cluster model) imposes a clear difference between amorphous Si material obtained by ion implantation and one obtained by evaporation and/or chemical vapor deposition. (C) 1997 American Institute of Physics.

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页码：3453 / 3456

页数：4

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