Ambipolar electrical transport in semiconducting single-wall carbon nanotubes

被引：570

作者：

Martel, R ^{[1
]}

Derycke, V ^{[1
]}

Lavoie, C ^{[1
]}

Appenzeller, J ^{[1
]}

Chan, KK ^{[1
]}

Tersoff, J ^{[1
]}

Avouris, P ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.87.256805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers-the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.

引用

页码：256805 / 1

页数：4

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