Observation of the Burstein-Moss shift in heavily Te-doped In0.5Ga0.5P layers grown by liquid phase epitaxy

The Burstein-Moss shift was observed for the first time in heavily Te-doped In0.5Ga0.5P epilayers grown by liquid phase epitaxy. The photoluminescence transition energy using the carrier concentration dependent Fermi energy and the obtained value showed good agreement with the experimentally observed value. The origin of the observed photoluminescence transition energy was calculated using the carrier concentration dependent Fermi energy and the obtained value showed good agreement with the experimentally observed value. The origin of the observed photoluminescence transition can be portrayed as the k non-conserving transitions between the electron in the higher energy level of the conduction band and the localized holes in the deeper tail state which is located on the top of the valence band. The carrier concentrations lie in the range from 1.5 x 10(18) to 4.9 x 10(18) cm(-3). (C) 1997 Elsevier Science S.A.