External resonator design for high-power laser diodes that yields 400 mW of TEM00 power

被引：71

作者：

Raab, V ^{[1
]}

Menzel, R ^{[1
]}

机构：

[1] Univ Potsdam, Inst Phys, Neuen Palais 10, D-14469 Potsdam, Germany

来源：

OPTICS LETTERS | 2002年 / 27卷 / 03期

关键词：

D O I：

10.1364/OL.27.000167

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Normal diode lasers with average output powers of 1 W or more exhibit bad beam quality and therefore cannot be applied for high-precision applications or nonlinear optics, Therefore an external output coupling mirror was used in our experiments. Diffraction-limited operation was achieved, which yielded 400 mW of power and a factor-of-12 improvement in brightness, With this resonator type 1.1 W of average output power was also obtained, with a beam propagation factor of 2.6 in the slow axis; fast axis emission is always diffraction limited. (C) 2002 Optical Society of America.

引用

页码：167 / 169

页数：3

共 11 条

[1] HIGH-POWER WITH HIGH-EFFICIENCY IN A NARROW SINGLE-LOBED BEAM FROM A DIODE-LASER ARRAY IN AN EXTERNAL CAVITY [J].

CHANGHASNAIN, CJ ;

BERGER, J ;

SCIFRES, DR ;

STREIFER, W ;

WHINNERY, JR ;

DIENES, A .

APPLIED PHYSICS LETTERS, 1987, 50 (21) :1465-1467

[2] 1.5-μm tapered-gain-region lasers with high-CW output powers [J].

Donnelly, JP ;

Walpole, JN ;

Groves, SH ;

Bailey, RJ ;

Missaggia, LJ ;

Napoleone, A ;

Reeder, RE ;

Cook, CC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (10) :1377-1379

[3] SINGLE LOBE OPERATION OF A 40-ELEMENT LASER ARRAY IN AN EXTERNAL RING LASER CAVITY [J].

GOLDBERG, L ;

WELLER, JF .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :871-873

[4] 1.35 W of stable single-frequency emission from an external-cavity tapered oscillator utilizing fiber Bragg grating feedback [J].

Goyal, AK ;

Gavrilovic, P ;

Po, H .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :575-577

[5] Single-mode operation of a laser-diode array with frequency-selective phase-conjugate feedback [J].

Lobel, M ;

Petersen, PM ;

Johansen, PM .

OPTICS LETTERS, 1998, 23 (11) :825-827

[6] High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer-structures [J].

Mikulla, M ;

Chazan, P ;

Schmitt, A ;

Morgott, S ;

Wetzel, A ;

Walther, M ;

Kiefer, R ;

Pletschen, W ;

Braunstein, J ;

Weimann, G .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (05) :654-656

[7]

NAGARAJAN R, 2000, INT SEM LAS C I EL E, P27

[8] 5-W CW diffraction-limited InGaAs broad-area flared amplifier at 970 nm [J].

OBrien, S ;

Schoenfelder, A ;

Lang, RJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (09) :1217-1219

[9] Paraxial-misalignment insensitive external-cavity semiconductor-laser array emitting near-diffraction limited single-lobed beam [J].

Pillai, RMR ;

Garmire, EM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :996-1008

[10] 400mW 980nm-Module with very high Power Conversion Efficiency [J].

Schmidt, B ;

Pawlik, S ;

Rothfritz, H ;

Thies, A ;

Mordiek, S ;

Harder, C .

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, :29-30

← 1 2 →