Laser ablation of highly oriented CdSe thin films and CdSe/CdTe multilayers on silicon substrates

被引：14

作者：

Giardini, A

Ambrico, M

Smaldone, D

Martino, R

Parisi, GP

Capozzi, V

Perna, G

机构：

[1] CNR, INST MAT SPECIALI, TITO, PZ, ITALY

[2] UNIV BARI, DIPARTIMENTO FIS, I-70126 BARI, ITALY

[3] UNIV BARI, UNITA INFM, I-70126 BARI, ITALY

来源：

APPLIED SURFACE SCIENCE | 1996年 / 106卷

关键词：

D O I：

10.1016/S0169-4332(96)00439-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The laser ablation technique has been successfully used in our laboratory for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(111) substrates, X-ray analysis showed that CdSe/Si(111) and CdSe/Si(100) films were grown in the hexagonal phase. Their orientation changed from (100) to (002) by only varying the substrate temperature from 200 degrees C to 400 degrees C. The same hexagonal growth was obtained in multilayers of CdSe and CdTe on Si(111). Photoluminescence spectra of CdSe films were studied as a function of the excitonic features and results on the extrinsic luminescence are reported.

引用

页码：144 / 148

页数：5

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