Properties of InAs thin films grown on (100)-oriented GaAs substrate with various tilted angles and directions of misorientation

被引：5

作者：

Yamamoto, M ^{[1
]}

Iwabuchi, T ^{[1
]}

Ito, T ^{[1
]}

Yoshida, T ^{[1
]}

Isoya, T ^{[1
]}

Shibasaki, I ^{[1
]}

机构：

[1] ASAHI CHEM IND CO LTD,FUJI,SHIZUOKA 416,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

InAs Hall element; InAs on GaAs; thin film; MBE; InAs morphology on GaAs;

D O I：

10.1016/S0022-0248(96)00956-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the dependence of the surface morphology and the sheet carrier density of InAs thin films epitaxially grown on (1 0 0)-oriented GaAs substrate with various misorientations of tilt directions and angles of tilt. We also studied the relation between the directions of tilt and the device properties of Hall elements fabricated from InAs thin films grown on GaAs substrates. With a misorientation of 2 degrees, we found a strong dependence of the offset voltage on the direction of tilt of the GaAs substrate. We applied these results to the fabrication of practical InAs Hall elements by molecular beam epitaxy. These Hall elements are now commercially available as magnetic sensors. Over five million Hall elements have been applied to current sensors and brushless motors in electronic appliances.

引用

页码：191 / 196

页数：6

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