Germanium/HfO2/TiN gate stacks for advanced nodes:: Influence of surface preparation on MOS capacitor characteristics

被引：15

作者：

Le Royer, C ^{[1
]}

Garros, X ^{[1
]}

Tabone, C ^{[1
]}

Clavelier, L ^{[1
]}

Morand, Y ^{[1
]}

Hartmann, JM ^{[1
]}

Campidelli, Y ^{[1
]}

Kermarrec, O ^{[1
]}

Loup, V ^{[1
]}

Martinez, E ^{[1
]}

Renault, O ^{[1
]}

Guigues, B ^{[1
]}

Cosnier, V ^{[1
]}

Deleonibus, S ^{[1
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time we report electrical and physical characterization of Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 2.5 mu m epitaxial Germanium layers grown on (100) Silicon. These capacitors were made using HfO2 as the dielectric and TiN as the metal gate electrode. We have studied the influence of the Ge surface preparation on the MOS electrical characteristics. It is demonstrated that a surface anneal step in a NH3 ambient before the HfO2 deposition results in significant improvements in both the equivalent oxide thickness (EOT) and the gate leakage current. We show that it is possible to achieve Ge/GeON/HfO2/TiN gate stacks with an EOT of 0.7 nm and a leakage cur-rent of 0.84 A/cm(2) at -2 V gate bias. The better transport properties of Ge and these performances show the interest of Ge and GeOI for the ITRS advanced nodes [1].

引用

页码：97 / 100

页数：4