Thermoelectric model to characterize carrier transport in organic semiconductors

被引：78

作者：

Kim, Gunho ^{[1
]}

Pipe, Kevin P. ^{[1
,2
]}

机构：

[1] Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 08期

关键词：

THIN-FILM TRANSISTORS; HOPPING CONDUCTIVITY; DISORDERED-SYSTEMS; CHARGE TRANSPORT; PENTACENE; MOBILITY; POLYMER; EFFICIENCY; INJECTION; CONTACT;

D O I：

10.1103/PhysRevB.86.085208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model for the Seebeck coefficient in the regime of hopping transport that includes the effects of Gaussian carrier density of states width and carrier localization allows these parameters to be derived independently of the attempt-to-jump rate, which can subsequently be derived from measured electrical conductivity. This model is applied to prototypical small molecular and polymer organic semiconductors to characterize carrier localization, quantify the role of dopants on the hopping transport parameters, and derive the effective dopant ionization fraction and activation energy.

引用

页数：5

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