Charge carrier mobility in doped semiconducting polymers

被引：143

作者：

Arkhipov, VI

Heremans, P

Emelianova, EV

Adriaenssens, GJ

Bässler, H

机构：

[1] IMEC, B-3001 Heverlee, Belgium

[2] Univ Louvain, Semicond Phys Lab, B-3001 Heverlee, Belgium

[3] Univ Marburg, Inst Phys Nucl & Macromol Chem, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 19期

关键词：

D O I：

10.1063/1.1572965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analytic model of the equilibrium hopping conductivity in a disordered organic semiconductor at large charge carrier densities is formulated. Calculated dependences of the equilibrium hopping mobility upon the carrier density are compared with recent experimental data obtained on doped poly(3-hexylthiophene) films. Doping is shown to create additional energy disorder due to potential fluctuations caused by the Coulomb field of randomly distributed dopant ions. (C) 2003 American Institute of Physics.

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页码：3245 / 3247

页数：3

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