Laplace transform deep level transient spectroscopy study of the EH6/7 center

被引：2

作者：

Alfieri, Giovanni ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

Intrinsic point defect; EH6/7; DLTS; charge state; DEFECTS;

D O I：

10.4028/www.scientific.net/MSF.740-742.645

中图分类号：

O7 [晶体学];

学科分类号：

070301 [无机化学];

摘要：

We employed Laplace transform deep level transient spectroscopy (LDLTS) for the resolution of the EH6/7 center in n-type 4H-SiC epilayers. Our results suggest that this technique is effective in separating the emission rates of the EH6 and EH7 levels. From the Arrhenius dependence of the emission rates we could estimate the energy position of EH6 and EH7 as 1.39 and 1.49 eV below the minimum of the conduction band edge, respectively. Generation of EH6 and EH7 centers by low-energy electron irradiation (dose dependence) was also investigated. At last, a double pulse Laplace DLTS is performed in order to show the electric field dependence of the emission rates of EH6 and EH7.

引用

页码：645 / 648

页数：4

共 14 条

[1]

Midgap levels in both n- and p-type 4H-SiC epilayers investigated by deep level transient spectroscopy -: art. no. 122104 [J].