Electrical and optical transport of GaAs/carbon nanotube heterojunctions

被引：54

作者：

Liang, Chen-Wei ^{[1
]}

Roth, Siegmar ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

NANO LETTERS | 2008年 / 8卷 / 07期

关键词：

D O I：

10.1021/nl0802178

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Heterojunctions consisting of nanotubes and an industrialized semiconductor-GaAs have been produced, and their transport properties were studied. We found that the p-doped GaAs forms an ohmic contact with a nanotube but the n-doped GaAs/nanotube heterojunction is rectifying. Analysis of measurement results at various temperatures shows that tunneling transport plays an important role. We also observed photovoltaic effects in n-GaAs/nanotube junction with the illumination of a green laser or desk lamp.

引用

页码：1809 / 1812

页数：4

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