Compositional effects on electrical and mechanical properties in carbon-doped oxide dielectric films: Application of Fourier-transform infrared spectroscopy

被引:44
作者
Andideh, E [1 ]
Lerner, M [1 ]
Palmrose, G [1 ]
El-Mansy, S [1 ]
Scherban, T [1 ]
Xu, GH [1 ]
Blaine, J [1 ]
机构
[1] Intel Corp, Hillsboro, OR 97124 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词
D O I
10.1116/1.1640401
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Organosilicate glasses, also known as carbon-doped oxides (CDO), have been studied for application as interlayer dielectrics in microprocessors. Fourier-transform infrared (FTIR) spectroscopy is used here to monitor CDO film compositions prepared by plasma-enhanced chemical vapor deposition of dimethyldimethoxysilane. The Si-CH3/Si-O peak area ratios represent the relative content of these functional groups within the films, and indicate compositional changes in the films produced. Additionally, a close inspection of the C-H stretching modes shows a large peak at 2962 cm(-1) due to the CH3 asymmetric stretch and a smaller shoulder to the right, made up of up to three other C-H stretching modes. The shoulder intensity divided by the asymmetric stretch intensity provides another metric that tracks compositional changes in the film. Product compositions indicated by FTIR also correlate well with physical properties such as dielectric constant, hardness, bulk modulus, and cohesive strength. (C) 2004 American Vacuum Society.
引用
收藏
页码:196 / 201
页数:6
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