Film formation and detachment during anodizing of Al-Mg alloys

被引:126
作者
Zhou, X
Thompson, GE
Skeldon, P
Wood, GC
Shimizu, K
Habazaki, H
机构
[1] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
[2] Keio Univ, Univ Chem Lab, Yokohama, Kanagawa 223, Japan
[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 98077, Japan
关键词
aluminium; alloys; anodizing; anodic films;
D O I
10.1016/S0010-938X(99)00007-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Anodic oxidation of binary A1-3 wt.% Mg and A1-5 wt.% Rig alloys has been undertaken in ammonium pentaborate electrolyte to develop barrier-type anodic films at relatively high current efficiency. During anodizing, aluminium and magnesium are oxidized at the alloy/film interface, entering the film as Al3+ and Mg2+ ions. Such behaviour is anticipated for an alloying element with a Gibbs free energy of oxide formation per equivalent less than that of alumina, further, the greater outward migration rate of Mg2+ ions relative to that of Al3+ ions in anodic alumina is expected from consideration of the respective single metal-oxygen bond energies. However, unexpectedly, with continued anodizing, the essentially alumina film detaches from the alloy surface, which is followed by growth of new film on the exposed substrate. The film detachment from the alloy is associated with void formation, considered to result from the significantly reduced Pilling-Bedworth ratio for formation of anodic MgO compared with that for anodic alumina. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1599 / 1613
页数:15
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