Atomistic simulations of the yielding of gold nanowires

被引:224
作者
Diao, JK
Gall, K
Dunn, ML
Zimmerman, JA
机构
[1] Univ Colorado, Dept Engn Mech, Boulder, CO 80309 USA
[2] Sandia Natl Labs, Sci Based Mat Modeling Dept, Livermore, CA 94551 USA
关键词
nanowire; yield; surface stress; Schmidt factor;
D O I
10.1016/j.actamat.2005.10.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We performed atomistic simulations to study the effect of free surfaces on the yielding of gold nanowires. Tensile surface stresses on the surfaces of the nanowires cause them to contract along the length with respect to the bulk face-centered cubic lattice and induce compressive stress in the interior. When the cross-sectional area of a < 100 > nanowire is less than 2.45 nm x 2.45 nm, the wire yields under its surface stresses. Under external forces and surface stresses, nanowires yield via the nucleation and propagation of the {111} < 112 > partial dislocations. The magnitudes of the tensile and compressive yield stress of < 100 > nanowires increase and decrease, respectively, with a decrease of the wire width. The magnitude of the tensile yield stress is much larger than that of the compressive yield stress for small < 100 > nanowires, while for small < 111 > nanowires, tensile and compressive yield stresses have similar magnitudes, The critical resolved shear stress (RSS) by external forces depends on wire width, orientation and loading condition (tension vs. compression). However, the critical RSS in the interior of the nanowires, which is exerted by both the external force and the surface-stress-induced compressive stress, does not change significantly with wire width for same orientation and same loading condition, and can thus serve as a '' local '' criterion. This local criterion is invoked to explain the observed size dependence of yield behavior and tensile/compressive yield stress asymmetry, considering surface stress effects and different slip systems active in tensile and compressive yielding. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:643 / 653
页数:11
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