Nano-processing with gas cluster ion beams

被引：82

作者：

Yamada, I ^{[1
]}

Matsuo, J ^{[1
]}

Insepov, Z ^{[1
]}

Aoki, T ^{[1
]}

Seki, T ^{[1
]}

Toyoda, N ^{[1
]}

机构：

[1] Kyoto Univ, Ion Beam Engn Expt Lab, Sakyo Ku, Kyoto 6068501, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 164卷

关键词：

gas cluster ion beam processing; ion implantation; sputtering; smoothing; thin film formation;

D O I：

10.1016/S0168-583X(99)01163-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper describes the fundamental principles and experimental status of gas cluster ion beam (GCIB) processing as a new technique with promise for practical industrial applications. A review is presented of the theoretical and experimental characteristics of new gas cluster ion bombardment processes and of related equipment development. The impacts of accelerated cluster ions upon substrate surfaces impart very high-energy densities in the impact regions of individual clusters and produce non-linear processes that are not present in the impacts of individual atomic ions. These unique bombardment characteristics are expected to facilitate new industrial applications that would not be possible by traditional ion beam processing. Among these are shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low-temperature thin film formation. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：944 / 959

页数：16

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