Bound excitons in Cu2O:: Efficient internal free exciton detector

被引:28
作者
Jang, J. I. [1 ]
Sun, Y. [1 ]
Watkins, B. [1 ]
Ketterson, J. B. [1 ]
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
来源
PHYSICAL REVIEW B | 2006年 / 74卷 / 23期
关键词
D O I
10.1103/PhysRevB.74.235204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the spectroscopic observation of bound excitons in natural Cu2O samples, which are generated by impurity capture of free excitons. Due to the broken symmetry of a bound exciton, its radiative recombination rate increases, causing a greatly enhanced luminescence intensity compared with that for a free exciton. Moreover, the bound exciton luminescence serves as an internal monitor of the free ortho- and free para-exciton densities, whereas the free para-exciton luminescence is allowed only via weak Gamma(-)(25) phonon emission. At high excitation levels, the bound exciton luminescence shows a density-dependent loss of excitons that is well explained by a recently proposed biexciton formation model. The temperature dependence of the bound ortho- and bound para-exciton luminescence indicates a T-1-dependence for the exciton-impurity capture rate.
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页数:7
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共 36 条
[1]   Optically induced multispin entanglement in a semiconductor quantum well [J].
Bao, JM ;
Bragas, AV ;
Furdyna, JK ;
Merlin, R .
NATURE MATERIALS, 2003, 2 (03) :175-179
[2]   TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP [J].
BENZAQUEN, R ;
LEONELLI, R ;
ROTH, AP .
PHYSICAL REVIEW B, 1995, 52 (03) :1485-1488
[3]  
Carlin R.L., 1977, MAGNETIC PROPERTIES
[4]   Optically induced entanglement of excitons in a single quantum dot [J].
Chen, G ;
Bonadeo, NH ;
Steel, DG ;
Gammon, D ;
Katzer, DS ;
Park, D ;
Sham, LJ .
SCIENCE, 2000, 289 (5486) :1906-1909
[5]   HYPERSPHERICAL FORMULATION OF IMPURITY-BOUND EXCITONS IN SEMICONDUCTORS [J].
DEGROOTE, JJ ;
HORNOS, JE ;
COELHO, HT ;
CALDWELL, CD .
PHYSICAL REVIEW B, 1992, 46 (04) :2101-2108
[6]   OSCILLATOR STRENGTH, LIFETIME AND DEGENERACY OF RESONANTLY EXCITED BOUND EXCITONS IN GAAS [J].
FINKMAN, E ;
STURGE, MD ;
BHAT, R .
JOURNAL OF LUMINESCENCE, 1986, 35 (04) :235-238
[7]   Excitons and biexcitons bound to a positive ion in a bismuth-doped inorganic-organic layered lead iodide semiconductor [J].
Fujisawa, J ;
Ishihara, T .
PHYSICAL REVIEW B, 2004, 70 (20) :205330-1
[8]   EXPERIMENTAL-DETERMINATION OF EQUILIBRIUM-CONSTANTS FOR EXCITONIC SYSTEMS IN STRESSED, ULTRAPURE SILICON [J].
GOURLEY, PL ;
WOLFE, JP .
PHYSICAL REVIEW B, 1982, 25 (10) :6338-6348
[9]   HYDROGEN-LIKE ABSORPTION SPECTRUM OF CUPROUS OXIDE [J].
HAYASHI, M ;
KATSUKI, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1952, 7 (06) :599-603
[10]   Auger recombination and biexcitons in Cu2O:: A case for dark excitonic matter [J].
Jang, J. I. ;
Wolfe, J. P. .
PHYSICAL REVIEW B, 2006, 74 (04)