TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP

被引：7

作者：

BENZAQUEN, R

LEONELLI, R

ROTH, AP

机构：

[1] UNIV MONTREAL,RECH PHYS & TECHNOL & COUCHES MINCES GRP,MONTREAL,PQ H3C 3J7,CANADA

[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.52.1485

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temperature-dependent photoluminescence measurements have been performed to study the linewidth of the ground and first excited states of the neutral shallow-donor bound-exciton transition in a high-purity n-type InP epilayer. For temperatures below 20 K, a theoretical model developed by Chou and Neumark to take into account the electron-hole correlation and the usual electron-phonon coupling is found to be in acceptable agreement with the linewidth data which follows a linear dependence upon temperature.

引用

页码：1485 / 1488

页数：4

共 7 条

[1] EVIDENCE FROM ELECTRICAL-TRANSPORT AND PHOTOLUMINESCENCE SPECTROSCOPY OF A BAND OF LOCALIZED DEEP DONORS IN HIGH-PURITY N-TYPE INP GROWN BY CHEMICAL-BEAM EPITAXY [J].