GROWTH OF HIGH-PURITY INP BY METALORGANIC MBE (CBE)

被引：55

作者：

HEINECKE, H

BAUR, B

HOGER, R

MIKLIS, A

机构：

[1] Siemens Research Laboratories, D-8000 München 83

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90352-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper describes a systematic study on the growth of InP by metalorganic MBE (MOMBE) using trimethylindium (TMI) and phosphine (PH3) as starting materials. InP layers with free electron concentrations as low as 2×1014 cm-3 and 77 K Hall mobilities up to 132,000 cm2/V·s were obtained. The excellent optical properties of the layers are demonstrated by photoluminescence spectra which are dominated by well resolved excitonic transitions. The donor bound exciton recombinations are detectable up to the 6th component and show linewidths of less than 0.08 meV. © 1990.

引用

页码：143 / 148

页数：6

共 19 条

[1] GROWTH OF HIGH-QUALITY INDIUM-PHOSPHIDE FROM METALORGANIC SOURCES BY MOLECULAR-BEAM EPITAXY
ANDREWS, DA
DAVEY, ST
TUPPEN, CG
WAKEFIELD, B
DAVIES, GJ
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 816 - 818
[2] ANDREWS DA, 1988, APPL PHYS LETT, V53, P79
[3] GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
CHEN, CH
KITAMURA, M
COHEN, RM
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (15) : 963 - 965
[4] GROWTH OF ULTRAPURE AND SI-DOPED INP BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
DIFORTEPOISSON, MA
BRYLINSKI, C
DUCHEMIN, JP
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 476 - 478
[5] SELECTIVE GROWTH OF GAAS IN THE MOMBE AND MOCVD SYSTEMS
HEINECKE, H
BRAUERS, A
GRAFAHREND, F
PLASS, C
PUTZ, N
WERNER, K
WEYERS, M
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 303 - 309
[6] KAWAGUCHI Y, 1986, I PHYS C SER, V79, P79
[7] Kayser O., 1988, CHEMTRONICS, V3, P90
[8] GAS SOURCE MBE GROWTH OF INP
MORISHITA, Y
MARUNO, S
GOTODA, M
NOMURA, Y
OGATA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 176 - 180
[9] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS
PUTZ, N
HEINECKE, H
HEYEN, M
BALK, P
WEYERS, M
LUTH, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 292 - 300
[10] VERY HIGH-PURITY INP EPILAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
RAZEGHI, M
MAUREL, P
DEFOUR, M
OMNES, F
NEU, G
KOZACKI, A
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 117 - 119

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