First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers

被引：147

作者：

Waldron, Derek ^{[1
]}

Timoshevskii, Vladimir

Hu, Yibin

Xia, Ke

Guo, Hong

机构：

[1] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada

[2] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada

[3] Chinese Acad Sci, Inst Phys, ICQS, Beijing 100080, Peoples R China

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.97.226802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report ab initio calculations of nonequilibrium quantum transport properties of Fe/MgO/Fe trilayer structures. The zero bias tunnel magnetoresistance is found to be several thousand percent, and it is reduced to about 1000% when the Fe/MgO interface is oxidized. The tunnel magnetoresistance for devices without oxidization reduces monotonically to zero with a voltage scale of about 0.5-1 V, consistent with experimental observations. We present an understanding of the nonequilibrium transport by investigating microscopic details of the scattering states and the Bloch bands of the Fe leads.

引用

页数：4

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