Photovoltaic characteristics of CuInS2/CdS solar cell by electron beam evaporation

When a CuInS2/CdS solar cell was fabricated by depositing CdS thin film with dopant In of 1.0 at% on ternary compound CuInS2 thin film with the lowest resistivity of 5.59 x 10(-2) Ohm cm, its best result was as follows: V-OC = 461 mV, I-SC = 26.9 mA, FF = 0.685, eta = 5.66% under the illumination of 100 mW/cm(2). And its series resistance and lattice mismatch was 5.1 Ohm and 3.2%, respectively. Besides, a 4-layer structure solar cell of low rho - CuInS2/high rho - CuInS2/high rho - CdS/low rho - CdS has been fabricated. When thickness of high rho - CuInS2 was 0.2 mu m, its best result was as follows: V-OC = 580 mV, I-SC = 30.6 mA, FF = 0.697, eta = 8.25%. And its series resistance and lattice mismatch were 4.3 Ohm and 2.8%, respectively.