Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

被引：62

作者：

Dhara, S ^{[1
]}

Datta, A

Wu, CT

Lan, ZH

Chen, KH

Wang, YL

Chen, LC

Hsu, CW

Lin, HM

Chen, CC

机构：

[1] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan

[2] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan

[3] Natl Taiwan Normal Univ, Dept Chem, Taipei, Taiwan

[4] Natl Taiwan Normal Univ, Dept Phys, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 03期

关键词：

D O I：

10.1063/1.1536250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NWs) is studied using a 50-keV Ga+ focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxial GaN film, large-scale amorphization is suppressed until a very high fluence of 2x10(16) ions cm(-2). In contrast to extended-defects as reported for heavy-ion-irradiated epitaxial GaN film, point-defect clusters are identified as major component in irradiated NWs. Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences. (C) 2003 American Institute of Physics.

引用

页码：451 / 453

页数：3

共 9 条

[1] Catalytic growth and characterization of gallium nitride nanowires [J].