NUCLEAR MICROPROBE ANALYSIS OF IMPLANTATION DAMAGE-INDUCED BY FOCUSED GALLIUM ION-BEAMS IN GAAS

被引：4

作者：

TAKAI, M ^{[1
]}

HARA, S ^{[1
]}

KISHIMOTO, T ^{[1
]}

YANAGISAWA, J ^{[1
]}

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 104卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)00464-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Damage creation in GaAs, implanted with Ga focused ion beams at various flux densities from 24 to 390 mA/cm(2), has been investigated by microprobe Rutherford backscattering/channeling and channeling contrast microscopy measurements. Implantation damage by focused ion beams was strongly decreased with the increase in flux density during implantation. High flux density implantation by Ga focused ion beams in GaAs was found to induce beam annealing during implantation.

引用

页码：524 / 527

页数：4

共 11 条

[1] FOCUSED SI ION-IMPLANTATION IN GAAS [J].

BAMBA, Y ;

MIYAUCHI, E ;

ARIMOTO, H ;

KURAMOTO, K ;

TAKAMORI, A ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L650-L652

[2] 2 MEV HE MICROBEAM DAMAGE IN SI AND GAAS [J].

BROWN, RA ;

MCCALLUM, JC ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 54 (1-3) :197-203

[3] RELATIONSHIP BETWEEN IMPLANTATION DAMAGE AND ELECTRICAL ACTIVATION IN GALLIUM-ARSENIDE IMPLANTED WITH SI+ [J].

HAYNES, TE ;

MORTON, R ;

LAU, SS .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :991-993

[4] DAMAGE DURING MICROCHANNELING ANALYSIS USING 400 KEV HELIUM ION MICROPROBE [J].

HIRAI, K ;

TAKAI, M ;

KINOMURA, A ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B) :L649-L651

[5] FABRICATION OF A GAAS QUANTUM-WELL-WIRE STRUCTURE BY GA FOCUSED-ION-BEAM IMPLANTATION AND ITS OPTICAL-PROPERTIES [J].

HIRAYAMA, Y ;

TARUCHA, S ;

SUZUKI, Y ;

OKAMOTO, H .

PHYSICAL REVIEW B, 1988, 37 (05) :2774-2777

[6] CHANNELING CONTRAST ANALYSIS OF LOCAL DAMAGE DISTRIBUTIONS INDUCED BY MASKLESS IMPLANTATION [J].

KINOMURA, A ;

TAKAI, M ;

HIRAI, K ;

NAMBA, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :866-869

[7] DOSE-RATE EFFECTS IN FOCUSED-ION-BEAM IMPLANTATION OF SI INTO GAAS [J].

LEZEC, HJ ;

MUSIL, CR ;

MELNGAILIS, J ;

MAHONEY, LJ ;

WOODHOUSE, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05) :2709-2713

[8] LATERAL SPREADS OF BE AND SI IN GAAS IMPLANTED WITH A MASKLESS ION-IMPLANTATION SYSTEM [J].

MIYAUCHI, E ;

ARIMOTO, H ;

BAMBA, Y ;

TAKAMORI, A ;

HASHIMOTO, H ;

UTSUMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L423-L425

[9]

TAKAI M, 1992, SCANNING MICROSCOPY, V6, P147

[10] HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON [J].

TAMURA, M ;

SHUKURI, S ;

ISHITANI, T ;

ICHIKAWA, M ;

DOI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L417-L420

← 1 2 →