DOSE-RATE EFFECTS IN FOCUSED-ION-BEAM IMPLANTATION OF SI INTO GAAS

被引：15

作者：

LEZEC, HJ ^{[1
]}

MUSIL, CR ^{[1
]}

MELNGAILIS, J ^{[1
]}

MAHONEY, LJ ^{[1
]}

WOODHOUSE, JD ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 05期

关键词：

D O I：

10.1116/1.585677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion current densities in focused-ion-beam (FIB) implantations are several orders of magnitude greater than those of conventional broad-beam implantations. The corresponding increase in dose rate during implantation is shown to affect parameters of interest in device fabrication. FIB and broad-beam Si implants into GaAs at energies from 70 to 280 keV and at doses from 3 x 10(12) to 10(14) cm-2 are characterized using secondary ion mass spectroscopy (SIMS) and Hall-effect measurements. Reduced straggle, decreased activation, and modified carrier profiles are observed for FIB implants, particularly at higher energies and doses. These effects are attributed to dose-rate-dependent lattice damage.

引用

页码：2709 / 2713

页数：5

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