A TUNABLE-FREQUENCY GUNN DIODE FABRICATED BY FOCUSED ION-BEAM IMPLANTATION

被引：9

作者：

LEZEC, HJ

ISMAIL, K

MAHONEY, LJ

SHEPARD, MI

ANTONIADIS, DA

MELNGAILIS, J

机构：

[1] MIT, LINCOLN LAB, LEXINGTON, MA 02173 USA

[2] MIT, ELECTR RES LAB, CAMBRIDGE, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：476 / 478

页数：3

共 9 条

[1]

BOSCH BG, 1975, GUNN EFFECT ELECTRON, P372

[2] PLANAR GUNN-EFFECT OSCILLATORS WITH CONCENTRIC ELECTRODES [J].

CLARKE, GM ;

EDRIDGE, AL ;

BASS, JC .

ELECTRONICS LETTERS, 1969, 5 (20) :471-&

[3]

ISMAIL K, 1985, 15TH ESSDERC AACH

[4] VOLTAGE TUNING OF CONCENTRIC PLANAR GUNN DIODES [J].

JEPPSSON, B ;

MARKLUND, I ;

OLSSON, K .

ELECTRONICS LETTERS, 1967, 3 (11) :498-&

[5] FOCUSED ION-BEAM TECHNOLOGY AND APPLICATIONS [J].

MELNGAILIS, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :469-495

[6] FREQUENCY MEASUREMENTS ON GUNN EFFECT DEVICES WITH CONCENTRIC ELECTRODES [J].

NEWTON, CO ;

BEW, G .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (08) :1189-+

[7]

ONDRIA J, 1987, IEEE MTT S DIGEST, P977

[8] SYNTHESIS OF COMPLEX ELECTRONIC FUNCTIONS BY SOLID STATE BULK EFFECTS [J].

SANDBANK, CP .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :369-+

[9] FUNCTIONAL BULK SEMICONDUCTOR OSCILLATORS [J].

SHOJI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :535-+

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