VOLTAGE TUNING OF CONCENTRIC PLANAR GUNN DIODES

被引：15

作者：

JEPPSSON, B

MARKLUND, I

OLSSON, K

机构：

来源：

关键词：

D O I：

10.1049/el:19670393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：498 / &

共 7 条

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BUTCHER, PN ;

FAWCETT, W .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11) :1425-&

[2] EFFECT OF DOMAIN AND CIRCUIT PROPERTIES ON OSCILLATIONS IN GAAS [J].

GUNN, JB .

JASKOLSKI, SV ;

ISHII, TK .

[4] FAILURE MECHANISMS IN GUNN DIODES [J].

JEPPSSON, B ;

MARKLUND, I .

[5]

KING G, 1966, ELECTRON LETT, V2, P314

[6] A VOLTAGE TUNABLE GUNN-EFFECT OSCILLATOR [J].

SHOJI, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :130-+

[7]

WARD AL, 1967, C SOLIDSTATE DEVICES