HIGH-DOSE RATE EFFECT OF FOCUSED-ION-BEAM BORON IMPLANTATION INTO SILICON

被引：19

作者：

TAMURA, M

SHUKURI, S

ISHITANI, T

ICHIKAWA, M

DOI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 06期

关键词：

D O I：

10.1143/JJAP.23.L417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L417 / L420

页数：4

共 13 条

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[2]

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[3]

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[8] MASS-SEPARATED MICROBEAM SYSTEM WITH A LIQUID-METAL-ION SOURCE [J].

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[9]

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[10] FINE FOCUSED ION-BEAMS [J].

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