High average power short-pulse generation from singlemode InGaAs GaAs laser diodes

被引：9

作者：

Rafailov, EU ^{[1
]}

Birkin, DJL

Avrutin, EA

Sleat, WE

Sibbett, W

机构：

[1] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1999年 / 146卷 / 01期

关键词：

D O I：

10.1049/ip-opt:19990182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate singlemode optical pulses as short as 40 ps, with an average power of similar to 70 mW and a peak power > 0.7 W, from InGaAs/GaAs ridge-waveguide laser diodes under large-signal direct modulation at gigahertz frequencies. The experimental results are in good agreement with rate-equation simulations.

引用

页码：51 / 54

页数：4

共 12 条

[1]

FINCH A, 1989, REV SCI INSTRUM, V60, P837

[2] LARGE-SIGNAL DIRECT MODULATION OF INJECTION LASERS [J].

HARTH, W .

ELECTRONICS LETTERS, 1973, 9 (22) :532-533

[3]

IKEGAMI T, 1970, ELECT COMMUN B, V53, P203

[4] SHORT-PULSE AND HIGH-FREQUENCY SIGNAL GENERATION IN SEMICONDUCTOR-LASERS [J].

LAU, KY .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1989, 7 (02) :400-419

[5] NONLINEAR DYNAMICS OF A DIRECTLY MODULATED 1.55-MU-M INGAASP DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASER [J].

LIU, HF ;

NGAI, WF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1668-1675

[6]

Rafailov EU, 1998, MICROW OPT TECHN LET, V18, P354, DOI 10.1002/(SICI)1098-2760(19980805)18:5<354::AID-MOP14>3.0.CO

[7]

2-2

[8] DRESSED DYNAMICS OF SEMICONDUCTOR-LASERS [J].

SHORE, KA .

IEE PROCEEDINGS-J OPTOELECTRONICS, 1989, 136 (01) :14-17

[9]

SPENCER R, 1997, HIGH SPEED DIODE LAS, P41

[10]

VANGIESON E, 1989, I PHYSICS C SERIES, V96, P519

← 1 2 →