High average power short-pulse generation from singlemode InGaAs GaAs laser diodes

被引：9

作者：

Rafailov, EU ^{[1
]}

Birkin, DJL

Avrutin, EA

Sleat, WE

Sibbett, W

机构：

[1] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1999年 / 146卷 / 01期

关键词：

D O I：

10.1049/ip-opt:19990182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate singlemode optical pulses as short as 40 ps, with an average power of similar to 70 mW and a peak power > 0.7 W, from InGaAs/GaAs ridge-waveguide laser diodes under large-signal direct modulation at gigahertz frequencies. The experimental results are in good agreement with rate-equation simulations.

引用

页码：51 / 54

页数：4