High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

被引：53

作者：

Chen, CH ^{[1
]}

Su, YK

Chang, SJ

Chi, GC

Sheu, JK

Chen, JF

Liu, CH

Liaw, YH

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cent Univ, Dept Phys, Chungli 320, Taiwan

[4] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yan Hsui 737, Taiwan

[5] Chin Min Coll, Dept Elect Engn, To Fen 351, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 03期

关键词：

GaN; green light emitting diode (LED); charge asymmetric resonance tunneling (CART); MQW;

D O I：

10.1109/55.988814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we have applied the so called charge asymmetric resonance tunneling (CART) structure to nitride-based green light emitting diode (LED). From our CART LED, we observed an abrupt turn-on voltage near 2.2 V, and the forward voltage is around 3.2 V at 20 mA injection current. At 20 mA, the output power, and external quantum efficiency of the CART LED are about 4 mW, and 6.25%, respectively. The high brightness and efficiency green LED can be obtained by using the CART structure.

引用

页码：130 / 132

页数：3

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