Adsorption of partially and fully dissociated H2S molecules on the Si(001) and Ge(001) surfaces

被引：24

作者：

Çakmak, M ^{[1
]}

Srivastava, GP ^{[1
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.60.5497

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ab initio calculations, based on pseudopotentials and the density functional theory, have been made to investigate the equilibrium atomic geometry, electronic states, and bonding of the H2S molecule on the Si(001) and Ge(001) surfaces within two dissociative adsorption geometries. First we consider adsorption of partially dissociated species (SH)(-) and H+ onto the Si or Ge dimer with a(1x2) surface periodicity. Secondly, we consider adsorption of fully dissociated species S and 2H on the surface with a (1 x 2) periodicity but without dimer formation. In general, the adsorption of H2S on the Si(001) and Ge(001) surfaces shows similar behavior. For both geometries studied here, the fundamental band gap is free of surface states, with the highest occupied state lying below the valence band maximum. [S0163-1829(99)14531-4].

引用

页码：5497 / 5505

页数：9

共 25 条

[11] Diffusion mechanisms of a Si adatom on H-terminated Si(100) surfaces [J].