On interface and oxide degradation in VLSI MOSFETs - Part I: Deuterium effect in CHE stress regime

被引:21
作者
Esseni, D [1 ]
Bude, JD
Selmi, L
机构
[1] Agere Syst, Murray Hill, NJ 07974 USA
[2] Univ Udine, DIEGM, I-33100 Udine, Italy
关键词
channel hot electron (CHE) degradation; hydrogen/deuterium (H/D) isotope effect; interface states; MOSFETs relibility; stress-induced leakage current (SILC);
D O I
10.1109/16.981214
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper analyzes in detail the generation of interface states (N-it) and stress-induced leakage current (SILC) during channel hot electron (CHE) stress experiments in the context of a possible hydrogen/deuterium (H/D) isotope effect. Our results show that N-it generation is related to the hydrogen release (HR) at the Si-SiO2 interface at relatively high V-G where a large isotope effect is found. Instead, for gate voltages (V-G) favorable for hot hole injection (HHI) the N-it creation becomes a unique function of hole fluence and the isotope effect disappears. In the studied stress conditions, we found no experimental evidence supporting a causal relation between SILC generation and HR because no isotope effect is observed even when the corresponding N-it measurements reveal a very different D/H release rate. Similar to N-it generation, we found that SILC becomes a unique function of hole fluence at low stress V-G. Relevant implications and extensions of these results to the Fowler-Nordheim (FN) tunneling stress conditions are discussed in the companion paper [47].
引用
收藏
页码:247 / 253
页数:7
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