SILC-related effects in flash E2PROM's -: Part II:: Prediction of steady-state SILC-related disturb characteristics

被引：22

作者：

De Blauwe, J ^{[1
]}

Van Houdt, J ^{[1
]}

Wellekens, D ^{[1
]}

Groeseneken, G ^{[1
]}

Maes, HE ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

关键词：

D O I：

10.1109/16.704375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new methodology is developed, and applied thereafter, to predict the disturb characteristics of an arbitrary Flash (EPROM)-P-2 device which are related to steady-state stress induced leakage current (SILC) [1], This prediction methodology is based on a quantitative model for steady-state SILC, which has been developed on capacitors and nFET's as was reported earlier in Part I, Here, this model is shown to be also valid for tunnel oxide Flash (EPROM)-P-2 devices, and used thereafter in a consistent and well-understood cell optimization procedure. The model requires as only input basic cell parameters and an oxide qualification obtained at the capacitor and transistor level.

引用

页码：1751 / 1760

页数：10

共 13 条

[1] RELIABILITY ISSUES OF FLASH MEMORY CELLS [J].

ARITOME, S ;

SHIROTA, R ;

HEMINK, G ;

ENDOH, T ;

MASUOKA, F .

PROCEEDINGS OF THE IEEE, 1993, 81 (05) :776-788

[2]

Baglee D. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P624

[3]

De Blauwe J., 1996, P 26 ESSDERC, P361

[4] A new quantitative model to predict SILC-related disturb characteristics in Flash E(2)PROM devices [J].

DeBlauwe, J ;

VanHoudt, J ;

Wellekens, D ;

Degraeve, R ;

Roussel, P ;

Haspeslagh, L ;

Deferm, L ;

Groeseneken, G ;

Maes, HE .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :343-346

[5] MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS [J].

DIMARIA, DJ ;

CARTIER, E .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3883-3894

[6] CORRELATION OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES WITH TRAP GENERATION INSIDE THE OXIDES [J].

DUMIN, DJ ;

MADDUX, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :986-993

[7]

KATO M, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P45, DOI 10.1109/IEDM.1994.383470

[8]

KIM J, 1997, P 35 ANN IEEE INT RE, P12

[9]

Kimura M., 1994, P INT REL PHYS S, P167

[10]

MAITI B, 1996, P INT REL PHYS S, P55

← 1 2 →